msc0947.pdf 2/5/ 99 all ratings: device packaged in to-3 or microsemi coolpack package, t c = 25 c unless otherwise specified description: n-channel enhancement mode high density igbt die passivation: polyimide, 20 um, over silicon nitride, .8um emitter metallization: al/1%si for aluminum wire bonding, 3.2 um typical. collector/gate metallization: ti ? ni (1 um) ? ag (0.2 um) for soft solder attach features: low forward voltage drop, low tail current avalanche and surge rated high freq. switching to 20khz ultra low leakage current rbsoa and scsoa rated available with lot acceptance testing spec MSAGA11F120Dl, "-l" suffix maximum ratings: static electrical characteristics: 2830 s. fairview street santa ana, ca 92704 phone: (714) 979-8220 fax: (714) 559-5989 symbol parameter value unit v ces collector-emitter voltage 1200 volts v cgr collector-gate voltage (r ge = 20k w ) 1200 volts v eg emitter-collector voltage 15 volts v ge gate-emitter voltage 20 volts i c1 continuous collector current @ t c = 25 c 22 amps i c2 continuous collector current @ t c = 110 c 11 amps i cm surge current (10 m s x 4ms double exponential, see figure 2) 55 amps i cm1 pulsed collector current ? @ t c = 25 c 44 amps i cm2 pulsed collector current ? @ t c = 110 c 22 amps i csurge2 surge current: tp= 2 us ( ton= 1.5 m s; toff= 0.5 m s to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute) 400 apk e as single pulse avalanche energy - 10 mj p d total power dissipation 125 watts t j, t stg operating and storage: junction temperature range -55 to 150 c MSAGA11F120D fast igbt die for implantable cardio defibrillator applications surge current (i cm ) - amps 10 m s x 4ms double exponential 55 10 m s 4000 m s time - m sec 35-50% of i cm max symbol characteristic / test conditions min typ max unit bv ces collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) 1200 volts rbv ces collector-emitter reverse breakdown voltage ? (v ge = 20v, i c = 10ma) -15 volts gate threshold voltage (v ce = v ge , i c = 350 m a, t j = 37 c 5.7 volts v ge (th) gate threshold voltage (v ce = v ge , i c = 350 m a, t j = 25 c 4.5 5.5 6.5 volts v ce (on) collector-emitter on voltage (v ge = 15v, i c = i c2, t j = 25 c) 3.1 3.5 volts collector-emitter on voltage (v ge = 15v, i c = i c2, t j = 37 c) 3.5 volts collector-emitter on voltage (v ge = 15v, i c = i c2, t j = 1 25 c) 4 4.5 volts i ces collector cut-off current (v ce = 80%v ces , v ge = 0v, t j = 25 c) 0.02 10 ua collector cut-off current (v ce = 80%v ces , v ge = 0v, t j = 37 c) 0.07 ua collector cut-off current (v ce = 80%v ces , v ge = 0v, t j = 1 25 c) 1000 ua gate-emitter leakage current (v ge = 25v, v ce =0v) 2 100 na i ges gate-emitter leakage current (v ge = 25v, v ce =0v), tj= 37 c 4 na
msc0947.pdf 2/5/ 99 all ratings: device packaged in to-3 or microsemi coolpack package, t c = 25 c unless otherwise specified dynamic characteristics: ? repetitive rating: pulse width limited by maximum junction temperature. - i c = i c2, v cc = 50v, r ce = 25 w , l = 300 m h, t j = 25 c ? t j = 150 c see mil-std-750 method 3471 die probe parameters (100% tests): symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v 600 720 pf c oes output capacitance v ce = 25v 60 120 pf c ros reverse transfer capacitance f = 1 mhz 38 55 pf qg total gate charge v ge = 15v 60 nc qge gate-emitter charge v cc = 0.5v ces 4 nc qgc gate-collector ("miller") charge i c = i c2 36 nc t d (on) turn-on delay time resistive switching (25 c) 35 ns t r rise time v ge = 15v, v cc = 0.5v ces 120 ns t d (off) turn-off delay time i c = i c2 580 ns t f fall time r e = 150 w 260 ns t d (on) turn-on delay time inductive switching (25 c) 55 110 ns t r rise time v clamp (peak) = 0.5v ces 50 100 ns t d (off) turn-off delay time v ge = 15v, i c = i c2 380 570 ns t f fall time r g = 150 w , t j = +25 c 80 120 ns t d (on) turn-off delay time inductive switching (125 c) 40 ns t r rise time v clamp (peak) = 0.5v ces 100 ns t d (off) turn-off delay time ( tsv) ( tsi) v ge = 15v, i c = i c2 550 700 ns t f fall time ( tfv) ( tfi) r g = 150 w , t j = +125 c 160 40 ns e off turn-off switching energy 1 mj gfe forward transconductance v ce =20v, i c = i c2 4.5 5 s symbol characteristic / test conditions min typ max unit bv ces collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) 1200 1400 volts rbv ces collector-emitter reverse breakdown voltage ? (v ge = 15v, i c = 10ma) -15 30 v ge (th) gate threshold voltage (v ce = 6.5 v, i c = 350 m a, t j = 25 c 4.6 5.5 6.5 v ce (on) collector-emitter on voltage (v ge = 12v, i c = 1 a , t j = 25 c) 1.45 2.0 i ces collector cut-off current (v ce = 1200 v, v ge = 0v, t j = 25 c) 0.15 400 ua i ges gate-emitter leakage current (v ge = 20 v, v ce =0v) 5 120 na MSAGA11F120D fast igbt die for implantable cardio defibrillator applications
msc0947.pdf 2/5/ 99 all ratings: device packaged in to-3 or microsemi coolpack package, t c = 25 c unless otherwise specified mechanical characteristics typical surge performance surge current (i cm ) - amps 10 m s x 4ms double exponential 55 10 m s 4000 m s time - m sec 35-50% of i cm max
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